Analytical Study of Ion Implantation and Laser Treatment of Gaas
R. S. Roy1, Nishi Kant2* and Ravindra Kumar3**
1Post Graduate Department of Physics, Rajendra College, Chapra, Bihar (India) 2Nabiganj, Chapra (Bihar) 3Prabhunath Nagar, Chapra (Bihar)
The progress in the area of applications of ion implementation and laser treatment to III-V compound semiconductors has been presented. The achievement till todate are discussed alongwith the yet unresolved problems. It can be stated that ion implementation and laser treatment studies on GaAs and other III-V compound semiconductors are scientifically as well as technologically extremely important areas of research that offers a of avenues for innovative and useful ideas.
KEYWORDS:Ion implementation; laser treatment; compound semiconductors
Download this article as:
| Copy the following to cite this article: Roy R. S, Kant N, Kumar R. Analytical Study of Ion Implantation and Laser Treatment of Gaas. Orient J Chem 2002;18(1). |
| Copy the following to cite this URL: Roy R. S, Kant N, Kumar R. Analytical Study of Ion Implantation and Laser Treatment of Gaas. Orient J Chem 2002;18(1). Available from: http://www.orientjchem.org/?p=17034 |
This work is licensed under a Creative Commons Attribution 4.0 International License.
About The Author
A New Edition of Web of Science
Journal Impact Factor
2022: 0.5
Five Year: 0.8
Journal is Indexed in
Cabells Whitelist
