Abstract

Masoud Sabaghi¹, Abbas Majdabadi¹, Saeid Marjani^1,2,* and Saeed Khosroabadi³

DOI : http://dx.doi.org/10.13005/ojc/310232

In this paper, the influence of stepped doping of the absorber layer on performance of Cadmium Sulfide/Cadmium Telluride (CdS/CdTe) solar cell has been investigated. At first, the electrical characteristics of conventional CdS/CdTe solar cell is validated with fabricated CdS/CdTe solar cell. To improve the maximum efficiency of CdS/CdTe solar cell, the doping and thickness of the absorption layer are optimized. By step doping concentration within the absorber layer using buffer layer back contact and the increase in stepping gradient of the doping of CdTe layer, improved the conversion efficiency about 2.4% were obtained. The open-circuit voltage, short-circuit current density, fill factor and total area conversion efficiency of optimized solar cell structure are 952 mV, 25.97 mA/cm², 78.5% and 18.7% under global AM 1.5 conditions, respectively.

Optimization; High efficiency; Step doping grading; Cadmium Sulfide/Cadmium Telluride (CdS/CdTe); Thin film solar cell

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