Abstract

Kishore Kumar Y B^1*, Suresh Babu G², Swapna Smitha A S², Surya Sekhar Reddy M³ and Kiran Y B⁴

DOI : http://dx.doi.org/10.13005/ojc/390622

Cu2ZnSnS4 (CZTS) presents itself as a potential quaternary semiconductor absorber layer in the field of thin film heterojunction solar cells. The conventional spray pyrolysis method has been used in the present investigation. X-ray diffraction results confirm the structure of the deposited films as kesterite. The lattice parameters are determined to be a = 0.5436 nm and c = 1.0856 nm. The material exhibits an energy gap of 1.5 eV and an optical absorption coefficient exceeding 104 /cm. CZTS films exhibit a p-type nature. The deposited films are kept on the hot surface for some time after the chemical spray pyrolysis is finished, which contributes to improved crystallinity. Using chemical synthesis techniques, a Cu2ZnSnS4 thin film solar cell is constructed. These solar cells exhibited an efficiency of 0.5%. Ongoing efforts are directed towards achieving reasonable efficiency levels.

Cu2ZnSnS4; Chemical spray pyrolysis technique; Heterojunction solar cell; Solar cell absorber material; Thin films

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