Abstract

Harish Chevva¹, Sunil Palla¹, Sanjay Sankaranarayanan^2*

DOI : http://dx.doi.org/10.13005/ojc/310252

Low temperature (70°C) deposition of Al-doped ZnO films are successfully reported by simple electrochemical deposition technique. Simple three electrode setup is used with chemical bath containing different molar ratios of Zinc nitrate and Aluminium nitrate (9:1, 8:2, 7:3 and 6:4), a constant potential of -1.3 V is employed between electrodes for deposition of films. ‘2θ’ and‘d’ spacing variations obtained from XRD with varied Al content proves doping of Al into crystal structure of ZnO. Al content from Elemental analysis (EDAX) is in accordance with the compositions used. Morphology of films is characterized by FE-SEM, where flake-like structures are observed. Variation of Electrical resistivity with varying Al content in the films supports the argument of doping. Lowest resistivity is observed for composition 7:3 i.e. 2.25x10-4 Ω cm. Optical characterization is done on the film powder for measuring band gap and transmittance, which showed 90% of transmittance and Band gap widening is observed for different compositions, due to incorporation of Al into crystal structure of ZnO.

Electrochemical deposition; ZnO; Al Doped; XRD Band Gap Widening and Transmittance

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