Abstract

Ho Soon Min^1* and Ng Sha Shiong²

DOI : http://dx.doi.org/10.13005/ojc/370404

The successive ionic layer adsorption and reaction method or called SILAR method was used to produce cobalt selenide thin films for the first time. The deposition was carried out onto the substrate under different various pH values. The X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet visible spectrophotometer were used to investigate the structure, morphology and optical properties of thin films, respectively. The XRD patterns confirmed that the presence of cubic phase cobalt selenide thin films. The grain size increased with increasing the pH value from pH 2 to pH 4 based on the FESEM images. The band gap values are in the range of 2 eV to 2.5 eV.

Band Gap; Cobalt Selenide; Semiconductor; SILAR Method; Thin Films

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