Abstract

The n-type tungsten oxide (WO₃) polycrystalline thin films have been prepared at an optimized parameters (0.20 M, 5 ml and 500^°C) using jet nebulizer spray pyrolysis (JNSP) technique. Such prepared WO₃ films were characterized by XRD, SEM, EDAX, UV-vis and I-V. The XRD pattern of the optimized WO₃ film reveals the monoclinic structure. The SEM and EDAX images shows that the surface morphological variations and elements present were confirmed. The optical properties were recorded by UV-vis spectrum and the maximum band gap value was observed as 3.86 eV for 500°C. The maximum conductivity of the prepared WO₃ was recorded as 1.201 x 10^-8 S/cm from I-V characterization for 500°C. Using J-V plot, the diode parameters of n-WO₃/p-Si prepared at 500°C with 0.2 M and 5 ml were measured under dark and illumination. The ideality factor (n) and barrier height (Φ_b) values of n-WO₃/p-Si diode are obtained as 5.8 and 0.80 eV in dark and 3.9 and 0.81 eV under illumination.