Abstract

Saeid Marjani¹, Saeed Khosroabadi² and Seyed Ebrahim Hosseini¹

DOI : http://dx.doi.org/10.13005/ojc/330303

In this paper, for the first time, the square-shaped extended source tunneling field-effect transistor (SES TFET) by means of the silicon carbide polytype (3C-SiC) and dopant pocket layer has been presented. By inserting the silicon carbide polytype as substrate and n-type pocket in the channel at the source edge, on-current is increased by about 10 times compared with the conventional SES TFET because of the reduced losses and energy band modification imposed by the silicon carbide and pocket doping, respectively. Additionally, using calibrated simulations, the SES TFET with 3C-SiC substrate and dopant pocket layer is evaluated in terms of various radio-frequency (RF) parameters, including the gate to source capacitance, gate to drain capacitance, transconductance, channel resistance, transport time delay, cutoff and maximum oscillation frequencies. The simulation results of the SES TFET with the 3C-SiC substrate and dopant pocket layer exhibits a superior switching-state current ratio (∼10¹³) and a small transport time delay (about 0.15 psec) that is a hopeful candidate for conventional SES TFET.

Silicon carbide polytype (3C-SiC); Cubic zinc-blende; Transport time delay; Switching-state current ratio; Dopant pocket layer; Tunneling field-effect transistors (TFETs)

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